This resulted in a very lessened do the job perform along with the development of the Schottky Get hold of concerning the BrGO and n-style Si substrate. Because of the higher proportion of B-C and B-C3 bonding from the BrGO/Si gadget than that inside the rGO/Si, the lessened Schottky barrier https://www.directivepublications.org/journal-of-applied-nanoscience/